參數(shù)資料
型號: 2SJ575
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET(P溝道MOSFET)
中文描述: 硅P通道MOS FET的性(P溝道MOSFET的)
文件頁數(shù): 5/7頁
文件大?。?/td> 103K
代理商: 2SJ575
2SJ575
5
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.4
-0.8
-1.2
-1.6
-2.0
V = 0,5 V
-5 V
Pulse Test
Switching Characteristics
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
-10 V
C
Drain to Source Voltage V (V)
Typical Capacitance
vs. Drain to Source Voltage
1000
100
10
1
-0.01
-0.1
-0.02
Drain Current I (A)
S
-0.05
5
2
20
50
200
500
V = -4 V, V = -10 V
PW = 5 μs, duty < 1 %
tf
r
d(on)
t
d(off)
t
0
-10
-20
-30
-40
-50
100
10
20
50
1
2
5
Ciss
Coss
Crss
V = 0
f = 1 MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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