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參數(shù)資料
| 型號(hào)： | 2SJ575 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SJ575 |
2SJ575
4
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
10
8
6
4
2
–40
0
40
80
120
160
0
I = -100mA
-10m A
Pulse Test
Pulse Test
I = -10m A, -50m A
V = -4 V
-10 V
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
V
D
D
-0.01
-0.05
-0.02
Drain Current I (A)
50
20
10
2
5
1.0
0.5
-0.1
V = -4 V
-10V
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature Tc ( °C)
Static Drain to Source on State
Resistance vs. Temperature
Typical Transfer Characteristics
-50m A
-100m A
-10m A, -50m A, -100m A
-0.01
-0.02
-0.1
0.5
0.1
0.01
Drain Current I (A)
|
F
-0.05
0.005
0.02
0.05
0.2
V = -10 V
Pulse Test
Tc = –25 °C
75 °C
25 °C
S
(
D
R
S
(
D
R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ576 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ580 | Ultrahigh-Speed Switching Applications |
| 2SJ583 | Ultrahigh-Speed Switching Applications |
| 2SJ583LS | Ultrahigh-Speed Switching Applications |
| 2SJ584LS | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ576 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ579 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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