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參數(shù)資料
| 型號： | 2SJ557A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 169K |
| 代理商： | 2SJ557A |
Data Sheet D19059EJ2V0DS
4
2SJ557A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-
G
ate
to
Source
Cut-off
V
oltage
-
V
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-50
0
50
100
150
VDS =
10 V
ID =
1.0 mA
Tch - Channel Temperature -
°C
|y
fs
|-
F
orward
Transfer
A
dmittance
-
S
0.01
0.1
1
10
-0.01
-0.1
-1
-10
VDS =
10 V
Pulsed
TA =
25°C
75°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(o
n)
-Drai
nto
S
ource
O
n-state
Res
istan
ce
-m
Ω
0
50
100
150
200
-0.1
-1
-10
-100
Pulsed
VGS =
10 V
4.5 V
4.0 V
ID - Drain Current - A
R
DS(on)
-Drain
to
So
urce
O
n-
state
Resi
stance
-m
Ω
200
150
100
50
0
-5
-10
-15
-20
Pulsed
ID =
2.5 A
1.0 A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
S
(on)
-Drain
to
S
ourc
eO
n-st
ate
Resis
tance
-m
Ω
0
50
100
150
200
-50
0
50
100
150
ID =
1.0 A
Pulsed
VGS =
10 V
4.5 V
4.0 V
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s-
Capacit
ance
-pF
10
100
1000
-0.1
-1
-10
-100
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ561 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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