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參數(shù)資料
| 型號(hào)： | 2SJ557A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2SJ557A |
Data Sheet D19059EJ2V0DS
2
2SJ557A
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS =
30 V, VGS = 0 V
–10
μA
Gate Leakage Current
IGSS
VGS = m16 V, VDS = 0 V
m10
μA
Gate to Source Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1.0 mA
1.0
1.5
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS =
10 V, ID = 1.5 A
1.0
3.0
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
10 V, ID = 1.0 A
72
100
m
Ω
RDS(on)2
VGS =
4.5 V, ID = 1.0 A
91
134
m
Ω
RDS(on)3
VGS =
4.0 V, ID = 1.0 A
113
166
m
Ω
Input Capacitance
Ciss
VDS =
10 V,
315
pF
Output Capacitance
Coss
VGS = 0 V,
78
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
63
pF
Turn-on Delay Time
td(on)
VDD =
10 V, ID = 1.0 A,
7
ns
Rise Time
tr
VGS =
10 V,
3.5
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
37
ns
Fall Time
tf
20
ns
Total Gate Charge
QG
VDD =
10 V,
3.2
nC
Gate to Source Charge
QGS
VGS =
4.0 V,
1.1
nC
Gate to Drain Charge
QGD
ID =
2.5 A
1.5
nC
Diode Forward Voltage
Note
VF(S-D)
IF = 2.5 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 2.5 A, VGS = 0 V,
37
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
μs
13
nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS ()
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG =
2 mA
VGS
Wave Form
VDS
Wave Form
VGS()
VDS()
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
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