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參數(shù)資料
| 型號(hào)： | 2SJ479STL-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SJ479STL-E |
2SJ479(L), 2SJ479(S)
Rev.3.00 Jun 05, 2006 page 5 of 7
–50
0
–10
–20
–30
–40
0
Source to Drain Voltage
VSD
(V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–10 V
–5 V
VGS = 0, 5 V
tr
td(on)
Vin
90%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
puls
e
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 2.5°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
VDD
= –10 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ483TZ-E | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ483 | SMALL SIGNAL, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ48 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ480 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
| 2SJ483 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ483TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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