- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33474 > 2SJ479STL-E 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SJ479STL-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SJ479STL-E |
2SJ479(L), 2SJ479(S)
Rev.3.00 Jun 05, 2006 page 4 of 7
0.10
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.02
0.04
0.06
0.08
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –20 A
ID = –30 A
–5 A, –10 A, –20 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
50
20
5
10
0.5
1
2
0.1
0.2
–0.1 –0.2 –0.5 –1
–10
–5
–2
–50
–20
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2
–5
–50
–20
–10
1000
500
200
50
100
20
5
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–4
–8
–12
–16
–20
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
2000
1000
500
200
100
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
16
32
48
64
80
VDS
VGS
1000
200
500
100
20
50
10
5
–0.2 –0.5 –1 –2
–20
–10
–5
–50
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –5 V
–10 V
–25 V
VDD = –25 V
–10 V
–5 V
–10 V
VGS = –4 V
–5 A, –10 A
VGS = –10 V, VDD = –10 V
duty
≤ 1 %
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479L | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ483TZ-E | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ483 | SMALL SIGNAL, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ48 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ480 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
| 2SJ483 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ483TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
發(fā)布緊急采購，3分鐘左右您將得到回復。