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參數(shù)資料
| 型號： | 2SJ471 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道的DV -蜇場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ471 |
2SJ471
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–4
–8
–12
–16
–20
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
0.5
0.2
0.1
0.02
0.01
0.05
–1
–2
–5
–10
–20
–50
Drain Current I (A)
D
Static Drain to Source on State Resistance
vs. Drain Current
0.10
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
Cate Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
–0.1
–50
50
0.1
Foward Transfer Admittance vs.
Drain Current
F
I = –20 A
–10 A
–5 A
V = –4 V
–10 V
V = –4 V
I = –20 A
–5, –10, –20 A
–5, –10 A
–10 V
20
10
2
5
1
0.2
0.5
–0.2 –0.5 –1 –2
Drain Current I (A)
–5 –10 –20
25
°
C
Tc = –25
°
C
75
°
C
V = –10 V
Pulse Test
D
V
Pulse Test
R
D
D
R
D
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ479 | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479L | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479S | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ485TP | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ485TP-FA | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ471(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ471-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel DV-L MOS FET |
| 2SJ472-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ472-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ472-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
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