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參數(shù)資料
| 型號： | 2SJ471 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道的DV -蜇場效應晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ471 |
2SJ471
4
Main Characteristics
40
30
20
10
0
50
100
150
200
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
–500
–200
–100
–20
–50
–10
–2
–5
–1
–0.5
–0.1 –0.3
Drain to Source Voltage V (V)
–1
–3
–10
–30
–100
1ms
Ta = 25
°
C
100
μ
PW=10ms(1sho)
DCOpeaion(T =25
°
C
D
D
Maximun Safe Operation Area
–50
–40
–30
–20
–10
0
–2
–4
–6
–8
–10
–4 V
–6 V
–10 V
–3 V
V = –2.5 V
–3.5 V
Typical Output Characteristics
Pulse Test
0
–1
–2
–3
–4
–5
Typical Transfer Characteristics
10
μ
s
–4.5 V
–5 V
–50
–40
–30
–20
–10
Tc = –25
°
C
25
°
C
75
°
C
V = –10 V
Pulse Test
Operation in
this area is
limited by R
DS(on)
Drain to Source Voltage V (V)
D
D
Gate to Source Voltage V (V)
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ479 | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479L | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479S | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ485TP | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ485TP-FA | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ471(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ471-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel DV-L MOS FET |
| 2SJ472-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ472-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ472-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
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