參數(shù)資料
型號: 2SJ390
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應晶體管性(P溝道MOSFET的)
文件頁數(shù): 6/10頁
文件大小: 63K
代理商: 2SJ390
2SJ390
6
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
V = –4 V
–10 V
I = –5 A
–5 A
–1, –2 A
–1, –2 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
–0.1 –0.2
–0.5
–1
–2
–5
–10
50
20
10
2
5
1
0.5
V = 10 V
Pulse Test
Tc = –25 °C
75 °C
25 °C
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
–0.1
1000
200
500
100
20
50
10
–0.3
–1
–3
–10
–30
–100
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
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