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參數(shù)資料
| 型號： | 2SJ390 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應(yīng)晶體管性（P溝道MOSFET的） |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SJ390 |
2SJ390
4
40
30
20
10
0
C
50
100
150
200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
–100
–30
–10
–3
–0.1
–1
–0.3
–100
–1
–2
–5
–10 –20
–50
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
10 μs
DCOpeaion(Tc=25°C
1ms
100μs
PW=10ms(1sho)
–20
–16
–12
–8
–4
0
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
–2
–4
–6
–8
–10
–4 V
Pulse Test
–6 V
–10 V
V = –2.5 V
–3.5 V
–3 V
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| 2SJ400-DL-E | 制造商:SANYO 功能描述:Pch 30V 35A 0.035 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH30V35ASOT404 |
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