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參數(shù)資料
| 型號(hào)： | 2SJ244 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ244 |
2SJ244
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–12
V
Gate to source voltage
V
GSS
±7
V
Drain current
I
D
±2
A
Drain peak current
I
D(pulse)*
1
±4
A
Channel dissipation
Pch*
2
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 100 s, duty cycle 10%
2. Value on the alumina ceramic board (12.5
×20×0.7 mm)
3. Marking is “JY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–12
—
V
I
D = –1 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±7
——V
I
G = ±10 A, VDS = 0
Gate to source cutoff current
I
GSS
——±5
A
V
GS = ±6 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–1AV
DS = –8 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–0.4
—
–1.4
V
I
D = –100 A, VDS = –5 V
Static drain to source on state
resistance
R
DS(on)1
—
0.65
0.9
I
D = –0.5 A*
1, V
GS = –2.5 V
Static drain to source on state
resistance
R
DS(on)2
—
0.5
—
I
D = –1 A*
1, V
GS = –4 V
Forward transfer admittance
|y
fs|
—
1.8
—
S
I
D = –1 A*
1, V
DS = –5 V
Input capacitance
Ciss
—
130
—
pF
V
DS = –5 V, VGS = 0,
Output capacitance
Coss
—
50
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
260
—
pF
Turn-on delay time
t
(on)
—
365
—
ns
I
D = –0.2 A*
1, Vin = –4 V,
Turn-off delay time
t
(off)
—
1450
—
ns
R
L = 51
Body to drain diode forward
voltage
V
DF
—
7VI
F = 4 A*
1, V
GS = 0
Note:
1. Pulse test
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PDF描述 |
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| 2SJ246(S) | 7 A, 30 V, 0.31 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ246(S) | 7 A, 30 V, 0.31 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ246(S)TR | 7 A, 30 V, 0.31 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ246(L) | 7 A, 30 V, 0.31 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ244JYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ244JYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ245 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ245(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ245(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA |
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