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參數(shù)資料
| 型號： | 2SH26 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel IGBT High Speed Power Switching |
| 中文描述： | 硅?通道高速IGBT的功率開關 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH26 |
2SH26
3
Main Characteristics
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Collector to Emitter Voltage V (V)
C
C
Maximum Safe Operation Area
Typical Output Characteristics
Reverse Bias SOA
Collector to Emitter Voltage V (V)
C
C
Collector to Emitter Voltage V (V)
C
80
60
40
20
0
50
100
150
200
100
30
10
1
3
10
30
100
3
1
0.3
0.1
0.03
0.01
300
1000
10
μ
s
1m
DCOeain(T 5
°
C
Ta = 25
°
C
20
16
12
8
4
0
2
4
6
8
10
0
200
400
600
800
20
5
10
2
0.5
1
0.2
0.1
V = 10 V
C
12 V
11 V
14 V
Pulse Test
15 V
50
13 V
Tc = 25
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SH27 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | Silicon N Channel IGBT High Speed Power Switching |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SH27 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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