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參數資料
| 型號： | 2SH26 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel IGBT High Speed Power Switching |
| 中文描述： | 硅?通道高速IGBT的功率開關 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH26 |
2SH26
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
V
CES
V
GES
I
C
ic(peak)
600
V
Gate to Emitter voltage
±
20
V
Collector current
10
A
Collector peak current
20
A
Collector dissipation
P
C
Tj
Note1
50
W
Channel temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at Tc = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I
CES
—
—
100
μ
A
V
CE
= 600V, V
GE
= 0
Gate to emitter leak current
I
GES
V
GE(off)
V
CE(sat)
—
—
±
1
μ
A
V
GE
=
±
20 V, V
CE
= 0
I
C
= 10mA, V
CE
= 10V
I
C
= 10A, V
GE
= 15V
Gate to emitter cutoff voltage
6.0
—
8.0
V
Collector to emitter saturation
voltage
—
2.1
2.6
V
Input capacitance
Cies
—
620
—
pF
V
= 10V, V
GE
= 0
f = 1MHz
Switching time
t
r
t
on
t
f
t
off
—
140
—
ns
I
C
= 10A
R
L
= 30
V
GS
=
±
15V
Rg = 50
—
215
—
ns
—
300
600
ns
—
380
760
ns
相關PDF資料 |
PDF描述 |
|---|---|
| 2SH27 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | Silicon N Channel IGBT High Speed Power Switching |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SH27 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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