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參數(shù)資料
| 型號： | 2SD637 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SD637 |
1
Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
I
Features
G
High foward current transfer ratio h
FE
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
0.3
150
3.5
max
1
1
460
0.5
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
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PDF描述 |
|---|---|
| 2SD638 | Silicon NPN epitaxial planer type(For medium-power general amplification) |
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| 2SB643 | Silicon PNP epitaxial planer type(For low-power general amplification) |
| 2SB644 | Silicon PNP epitaxial planer type(For low-power general amplification) |
| 2SD640 | SILICON NPN TRIPLE DIFFUSEO TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD637PQR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD637Q | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SD637-QR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD637-QRS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD637R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-71 |
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