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參數(shù)資料
| 型號(hào)： | 2SB643 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-power general amplification) |
| 中文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 39K |
| 代理商： | 2SB643 |
1
Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification
Complementary to 2SD638 and 2SD639
I
Features
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–60
–25
–50
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
2SB643
2SB644
2SB643
2SB644
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
*2
V
CE
= –10V, I
C
= –500mA
*2
I
C
= –300mA, I
B
= –30mA
*2
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–30
–60
–25
–50
–7
85
40
typ
90
– 0.35
200
6
max
–100
–1
340
– 0.6
15
Unit
nA
μ
A
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2SB643
2SB644
2SB643
2SB644
*2
Pulse measurement
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PDF描述 |
|---|---|
| 2SB644 | Silicon PNP epitaxial planer type(For low-power general amplification) |
| 2SD640 | SILICON NPN TRIPLE DIFFUSEO TYPE |
| 2SD641 | SILICON NPN TRIPLE DIFFUSED TYPE |
| 2SD648A | SILICON NPN TRIPLE DIFFUSED MEGA TYPE |
| 2SD661 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB643Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SB643R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SB643-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB643S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB643-S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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