參數(shù)資料
型號(hào)： 2SD2494
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
中文描述： 6 A, 110 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3PF, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 25K
代理商： 2SD2494
154
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1625)
Application :
Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2494
110
110
5
6
1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SD2494
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Darlington
2S D2494
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
1mA
0.5mA
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
0
2
4
6
2
6
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
I
B
=0.1mA
5
0.4mA
0.3mA
0.2mA
0.02
0.1
0.5
1
6
5
Collector Current I
C
(A)
D
F
(V
CE
=4V)
1000
500
200
5000
10000
40000
Typ
0.5
1
5
1
10
100
1000
5
50
500
2000
Time t(ms)
T
θ
j
(
0
6
4
2
0
2.5
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2CaTp
–CaTp
60
40
20
3.5
00
50
25
75
125
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
3
100
200
0.05
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100ms
0
3
2
1
0.1
1
0.5
10
5
100
50
Base Current I
B
(mA)
C
C
(
I
C
=5A
I
C
=3A
(V
CE
=4V)
0.02
0.1
5
1
6
0.5
Collector Current I
C
(A)
D
F
1000
500
100
5000
10000
40000
125C
25C
–30C
0
–0.1
–1
–6
40
20
80
60
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
Without Heatsink
Natural Cooling
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(
)
6
I
C
(A)
5
V
(V)
–5
I
(mA)
–5
t
on
(
μ
s)
0.8typ
t
stg
(
μ
s)
6.2typ
t
f
(
μ
s)
1.1typ
I
(mA)
5
V
(V)
10
B
C
E
(70
)
Equivalent circuit
h
FE
Rank
O(5000to12000), P(6500to20000), Y(15000to30000)
相關(guān)PDF資料
PDF描述
2SD2495 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
2SD2557 Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose)
2SD2558 Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose)
2SD2560 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
2SD2561 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
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