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參數(shù)資料
| 型號(hào)： | 2SD2425AB3 |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 5A條一（c）|至243VAR |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | 2SD2425AB3 |
2002
Document No. D16157EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2425 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
New package with dimensions in between those of small
signal and power signal package
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1578
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms, duty cycle
≤
50 %
7.0
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation
P
T
7.5 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Electrode connection
1. Emitter
2. Collector
3.Base
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| 2SD2438 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管) |
| 2SD2439 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管) |
| 2SD2470 | Low VCE(sat) Transistor(低VCE(sat)晶體管) |
| 2SD2493 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管) |
| 2SD2494 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2425-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,5.0A,MP-2 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) MP-2 T/R |
| 2SD2425-T1-AZ-AB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2436 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2438 | 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 150V 8A TO3PF |
| 2SD2439 | 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 150V 10A TO3PF |
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