參數(shù)資料
型號： 2SD2423
廠商： Hitachi,Ltd.
英文描述： Silicon NPN Epitaxial, Darlington
中文描述： npn型硅外延，達林頓
文件頁數(shù)： 2/6頁
文件大?。?/td> 34K
代理商： 2SD2423
2SD2423
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
*
1
Tj
50
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector current
1.5
A
Collector power dissipation
1
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Collector to emitter diode forward current
Note:
1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
I
D
1.5
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
—
70
V
I
C
= 100
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
—
V
I
C
= 10 mA, R
BE
=
∞
Collector to emitter sustaining
voltage
V
CEO(sus)
50
—
70
V
I
= 1.5 A, R
BE
=
∞
,
L = 10 mH*
1
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)1
—
—
10
μ
A
V
CE
= 40 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 1 A*
1
I
C
= 1 A, I
B
= 1 mA*
1
DC current transfer ratio
2000
—
10000
Collector to emitter saturation
voltage
—
—
1.5
V
Collector to emitter saturation
voltage
V
CE(sat)2
—
—
2.3
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
—
—
2.0
V
I
C
= 1 A, I
B
= 1 mA*
1
Base to emitter saturation
voltage
V
BE(sat)2
—
—
2.5
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
Emitter to collector diode
forward voltage
Notes: 1. Pulse test
2. Marking is “GT”.
V
D
—
—
3.5
V
I
D
= 1.5 A*
1
相關(guān)PDF資料
PDF描述
2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
2SD2425AB1 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
2SD2425AB2 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SD2425AB3 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
2SD2438 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管)
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