參數(shù)資料
型號: 2SD2387B
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|晶體管|達(dá)林頓| npn型| 140伏特五(巴西)總裁| 8A條一(c)|至247VAR
文件頁數(shù): 1/3頁
文件大?。?/td> 49K
代理商: 2SD2387B
1
Transistor
2SD2321
Silicon NPN epitaxial planer type
For low-frequency power amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Ratings
40
20
7
5
8
400
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
20
7
230
150
typ
0.28
150
26
max
0.1
1.0
0.1
600
1.0
50
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
230 ~ 380
340 ~ 600
*2
Pulse measurement
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