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參數(shù)資料
| 型號(hào)： | 2SD2391Q |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 5A條一（c）|采用SOT - 89 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SD2391Q |
1
Transistor
2SD2321
Silicon NPN epitaxial planer type
For low-frequency power amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Ratings
40
20
7
5
8
400
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
20
7
230
150
typ
0.28
150
26
max
0.1
1.0
0.1
600
1.0
50
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
230 ~ 380
340 ~ 600
*2
Pulse measurement
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2391T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2391T100Q | 功能描述:兩極晶體管 - BJT NPN 60V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2395E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2396 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SD2396J | 功能描述:TRANSISTOR NPN 60V 3A TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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