參數(shù)資料
型號: 2SD2130
元件分類: 功率晶體管
英文描述: 4 A, 50 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8H1A, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 161K
代理商: 2SD2130
2SD2130
2010-03-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.6
2.0
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 10 mA, IE = 0
50
60
70
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 10 mA, IC = 0
6
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
15000
DC current gain
hFE (2)
VCE = 2 V, IC = 3 A
1000
Collector-emitter saturation voltage
VCE (sat)
IC = 3 A, IB = 10 mA
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 3 A, IB = 10 mA
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
60
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Turn-on time
ton
0.2
Storage time
tstg
3.0
Switching time
Fall time
tf
IB1 = 10 mA,IB2 = 10 mA,
duty cycle ≤ 1%
0.5
μs
Marking
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
I B1
20 μs
Input
I B2
VCC = 30 V
IB1
IB2
Output
10
Ω
D2130
Part No. (or abbreviation code)
Lot No.
Note 2
相關(guān)PDF資料
PDF描述
2SD2134Q 1 A, 150 V, NPN, Si, POWER TRANSISTOR
2SD2136R 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD2137AP 3 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2147C6/RS 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126
2SD2147C6/QR 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126
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