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參數(shù)資料
| 型號(hào)： | 2SD2137AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 250K |
| 代理商： | 2SD2137AP |
Power Transistors
1
Publication date: September 2003
SJD00247BED
2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417A
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity.
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power
PC
15
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 30 mA, IB = 080
V
Base-emitter voltage
VBE
VCE
= 4 V, I
C
= 3 A
1.8
V
Collector-emitter cutoff current (E-B short)
ICES
VCB = 80 V, VBE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 6 V, I
C
= 0
100
A
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
320
hFE2
VCE = 4 V, IC = 3 A
10
Collector-emitter saturation voltage
VCE(sat)
IC
= 3 A, I
B
= 0.375 A
1.2
V
Transition frequency
fT
VCE = 5 V, IC = 0.2 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A
0.3
s
Storage time
tstg
VCC
= 50 V
2.5
s
Fall time
tf
0.2
s
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder
Dip
5.0±0.1
2.5
±
0.1
90
1.0
±0.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250
160 to 320
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD2137APA | 功能描述:TRANS NPN LF 80VCEO 3A MT-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2137APQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SD2137AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD2137AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SD2137O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR |
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