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參數(shù)資料
| 型號： | 2SD2082 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
| 中文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | FM100, TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | 2SD2082 |
145
Darlington
2S D2082
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
10
20
26
2
4
6
1
Collector-Emitter Voltage V
CE
(V)
3
5
C
C
(
3mA
6mA
1.5mA
12mA
4m
2mA
I
B
=1mA
Safe Operating Area
(Single Pulse)
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I
B
(mA)
C
C
(
4A
8A
I
C
=16A
0.2
1
0.5
10
16
5
5000
30000
10000
D
F
1000
500
100
Collector Current I
C
(A)
(V
CE
=4V)
Typ
1ms
10ms
10
50
5
3
100
200
0.03
0.05
0.1
1
0.5
10
50
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
0.1
1
5
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
100
μ
s
0
16
12
8
4
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
2CCeep
–(a m
h
FE
–I
C
Temperature
Characteristics
(Typical)
0.02
1
10
5
16
5000
20000
10000
D
F
1000
500
100
Collector Current I
C
(A)
(V
CE
=4V)
125C
–30C
25C
0.5
f
T
–I
E
Characteristics
(Typical)
0
–0.5
–1
–5
–10 –16
20
10
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
80
60
40
20
3.5
00
50
25
75
125
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Typ
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1382)
Application :
Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2082
120
120
6
16(
Pulse
26)
1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2082
10
max
10
max
120
min
2000
min
1.5
max
2.5
max
20
typ
210
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=16mA
I
C
=8A, I
B
=16mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
5
I
C
(A)
8
V
(V)
–5
I
(mA)
–16
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
7.0typ
t
f
(
μ
s)
1.5typ
I
(mA)
16
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2k
)(100
)
Equivalent
circuit
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2082_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SD2083 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 25A 3-Pin (3+Tab) TO-3P Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 25A 3-Pin (3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN GEN PURP MT-100 TO-3P 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2083_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SD2088 | 制造商:JVC Worldwide 功能描述:SUB ONLY SI.TRANSISTOR SUBBING WITH 2SD2088-T |
| 2SD2088(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 60V 2A 3-Pin LSTM |
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