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參數(shù)資料
| 型號： | 2SD2083 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管) |
| 中文描述： | 25 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | 2SD2083 |
146
Darlington
2S D2083
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
20
30
10
40
2
1
Collector-Emitter Voltage V
CE
(V)
3
5
4
6
C
C
(
3mA
5mA
8mA
12mA
30mA
20mA
I
B
=1.5mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
1
0.5
10
5
500
100
50
Base Current I
B
(mA)
C
C
(
6A
12A
I
C
=25A
0.2
0.5
1
5
10
40
5000
20000
10000
D
F
1000
500
100
Collector Current I
C
(A)
(V
CE
=4V)
Typ
–0.5
0
–1
–5
–10
50
100
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
0.1
1
3
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
1m
10ms
10
50
5
3
100
200
0.2
1
0.5
10
50
100
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
120
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
25
20
10
0
2
2.2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
2CCeep
–(a m
h
FE
–I
C
Temperature
Characteristics
(Typical)
0.02
1
10
5
40
5000
20000
10000
D
F
1000
500
100
Collector Current I
C
(A)
(V
CE
=4V)
125C
–30C
25C
0.5
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1383)
Application :
Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2083
120
120
6
25(
Pulse
40)
2
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2083
10
max
10
max
120
min
2000
min
1.8
max
2.5
max
20
typ
340
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=12A
I
C
=12A, I
B
=24mA
I
C
=12A, I
B
=24mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
24
R
L
(
)
2
I
C
(A)
12
V
(V)
–5
I
(mA)
–24
t
on
(
μ
s)
1.0typ
t
stg
(
μ
s)
6.0typ
t
f
(
μ
s)
1.0typ
I
(mA)
24
V
(V)
10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
C
E
(2k
)(100
)
Equivalent
circuit
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| 2SD2083_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
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