參數(shù)資料
型號(hào)： 2SD2014
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)
中文描述： 4 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝： FM20, TO-220F, 3 PIN
文件頁數(shù)： 1/1頁
文件大小： 26K
代理商： 2SD2014
139
Darlington
2S D2014
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
0
0
1
2
4
3
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
I
B
=20mA
0.3mA
1.0mA
0.4mA
0.5mA
0.8mA
0.6mA
Safe Operating Area
(Single Pulse)
4
1
0.1
0.5
0.03
50
30
500
100
1000
10000
5000
D
F
20000
Collector Current I
C
(A)
(V
CE
=4V)
10
50
3
5
100
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
1ms
0.5
1
5
1
10
100
1000
5
50
500
Time t(ms)
T
θ
j
(
Typ
V
CE
(sat)–I
B
Characteristics
(Typical)
0
3
2
1
0.2
5
10
1
100
50
Base Current I
B
(mA)
C
C
(
I
C
=4A
2A
1A
3A
300
μ
s
I
C
–V
BE
Temperature
Characteristics
(Typical)
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
0
3
4
2
1
1CaTp
2CT
–(T
h
FE
–I
C
Temperature
Characteristics
(Typical)
Collector Current I
C
(A)
D
F
0.03
0.5
1
4
0.1
100
50
30
500
1000
5000
10000
20000
(V
CE
=4V)
125C
25C
–30C
f
T
–I
E
Characteristics
(Typical)
–0
–0.05 –0.1
–0.5
–1
–4
20
40
120
100
60
80
C
T
(
Z
)
(V
CE
=10V)
Emitter Current I
E
(A)
Typ
Pc–Ta Derating
25
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
150x150x2
50x50x2
100x
100x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1257)
Application :
Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2014
120
80
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2014
10
max
10
max
80
min
2000
min
1.5
max
2.0
max
75
typ
45
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(
)
10
I
C
(A)
3
V
(V)
–5
I
(mA)
–10
t
on
(
μ
s)
1.0typ
t
stg
(
μ
s)
4.0typ
t
f
(
μ
s)
1.5typ
I
(mA)
10
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(3k
)(200
)
Equivalent
circuit
相關(guān)PDF資料
PDF描述
2SD2015 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
2SD2016 Silicon NPN Triple Diffused Planar Transistor(Igniter, Relay and General Purpose)
2SD2017 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
2SD2028 Low-Frequency Power Amp Applications
2SD2045 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2014_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2015 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 4A 3-Pin (3+Tab) TO-220F 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 4A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 120V 4A TO220F 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 120V 4A 25W BCE
2SD2015_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2016 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 200V 3A TO220F 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 200V 3A 25W BCE
2SD2016_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
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