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參數(shù)資料
| 型號： | 2SD1949T106/Q |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT3, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 106K |
| 代理商： | 2SD1949T106/Q |
Medium Power Transistor (50V,0.5A)
2SD1949 / 2SD1484K
2/2
2011.06 -
Rev. E
www.rohm.com
2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SD1949
2SD1949 / 2SD1484K
2SD1484K
Electrical characteristic curves
20
10
5
2
1
0.5
0.2
0.1
0.2
0
0.4
0.8
0.6
1.2
1.0
50
100
200
BASE TO VOLTAGE : VBE (V)
Fig.1 Ground emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
VCE=6V
60
40
20
0
1
024
35
80
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
IB=0mA
VCE=6V
500
200
100
50
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500
1000
COLLECTOR CURRENT IC (mA)
Fig.3 DC current gain vs. Collector current ( )
DC
CURRENT
GAIN
h
FE
1000
500
200
100
50
20
12
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
Fig.4 DC current gain vs. Collector currnet ( )
DC
CURRENT
GAIN
h
FE
VCE=10V
-25 C
Ta=75 C
25 C
50
20
10
5
0.1 0.2
0.5
12
510 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Input-and-output capacity
vs.voltage characteristic
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Ta=25 C
f=1MHz
IE=0A
0.5
0.2
0.1
0.05
0.02
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
IC/IB=10
-25 C
Ta=75 C
25 C
0.5
0.2
0.1
0.05
0.02
5
10
20
50 100 200
500
Fig.5 Collector-emitter saturation voltage
vs. Collector current
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
EMITTER CURRENT : IE (mA)
500
200
100
-1
-2
-5
-10
-20
-50
Fig.8 Transition frequency
vs.emitter current
TRANSITION
FREQUENCY
:
f
T
(MH
Z
)
Ta=25 C
Cib
Cob
Ta=25 C
Ta
=
100
C
25
C
-
25
C
VCE=3V
1V
IC/IB
=100/1
50/1
20/1
10/1
VCE=6V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1949T106R | 功能描述:兩極晶體管 - BJT NPN 50V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1950 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-6230V 2A .4W ECB SURFACE MOUNT |
| 2SD1950-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:NPN TRANSISTOR 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,25V,2A,P-MINIMOLD3 制造商:Renesas 功能描述:Trans GP BJT NPN 25V 2A 4-Pin(3+Tab) Power Mini-Mold |
| 2SD1950-T1-AZ(VK) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1950-T1-AZ(VL) | 制造商:Renesas Electronics 功能描述:NPN |
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