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參數(shù)資料
| 型號： | 2SD1949T106/Q |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT3, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SD1949T106/Q |
1/2
Medium Power Transistor (50V,0.5A)
2SD1949
2SD1949 / 2SD1484K
2SD1484K
Data Sheet
2011.06 -
Rev. E
www.rohm.com
2011 ROHM Co., Ltd. All rights reserved.
2SD1949 / 2SD1484K
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
50
5
0.5
0.2
150
55 to +150
Unit
V
A
W
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
50
5
120
250
6.5
0.5
390
V
MHz
pF
IC
=1mA
VCB
=30V
VEB
=4V
VCE/IC
=3V/10mA
VCE
=5V , I
E
= 20mA , f=100MHz
VCB
=10V , I
E
=0A , f=1MHz
2SD1484K
SMT3
QR
T146
3000
C
A
IC
=100A
IE
=100A
A
Parameter
Transition frequency
Output capacitance
V
CE(sat)
0.4
VIC/IB
=150mA/15mA
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum rationgs (Ta=25 C)
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pleces)
2SD1949
UMT3
QR
T106
3000
Marking
Danotes hFE
Y
Features
Dimensions (Unit : mm)
1) High current.(IC=0.5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
UMT3
(SC-70)
<SOT-323>
Electrical characteristic curves
(1) Emitter
(2) Bace
(3) Collector
(1) Emitter
(2) Bace
(3) Collector
SMT3
(SC-59)
<SOT-346>
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1949T106R | 功能描述:兩極晶體管 - BJT NPN 50V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1950 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-6230V 2A .4W ECB SURFACE MOUNT |
| 2SD1950-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:NPN TRANSISTOR 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,25V,2A,P-MINIMOLD3 制造商:Renesas 功能描述:Trans GP BJT NPN 25V 2A 4-Pin(3+Tab) Power Mini-Mold |
| 2SD1950-T1-AZ(VK) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1950-T1-AZ(VL) | 制造商:Renesas Electronics 功能描述:NPN |
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