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參數(shù)資料
| 型號(hào)： | 2SD1221O |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, 2-7J1A, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 150K |
| 代理商： | 2SD1221O |
2SD1221
2010-05-19
3
hFE – IC
VCE (sat) – IC
IC – VCE
IC – VBE
Collector-emitter voltage VCE (V)
Colle
ct
or
curr
ent
I C
(A
)
Base-emitter voltage VBE (V)
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
DC
curre
nt
gain
h
FE
Collector current IC (A)
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Ambient temperature Ta (°C)
PC – Ta
Colle
ctor
p
ower
d
issip
atio
n
P
C
(W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
0
Common emitter
Tc = 25°C
90
80
70
60
50
40
30
20
0
3.0
2.0
1.0
2
4
6
8
IB = 10 mA
0
Common emitter
VCE = 5 V
3.0
2.0
1.0
0.4
0.8
1.2
1.6
25
Tc = 100°C
Common emitter
VCE = 5 V
500
100
50
30
10
0.03
0.1
0.3
1
3
300
25
Tc = 100°C
Common emitter
IC/IB = 10
1
0.5
0.3
0.1
0.05
0.02
0.03
0.1
0.3
1
3
25
Tc = 100°C
24
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 mm × 50 mm × 0.8 mm
(3) No heat sink
25
50
75
100
125
150
175
4
8
12
16
20
(1)
(2)
(3)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
10
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
DC operation
(Tc = 25°C)
30
100
3
10
1
0.1
0.3
0.5
5
3
100 ms*
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1221-O(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SD1221Y | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 |
| 2SD1221-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 60V 3A PW MOLD |
| 2SD1221-Y(T6L1,NQ) | 制造商:Toshiba 功能描述:NPN |
| 2SD1221-Y(TE16L1,N | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) New PW-Mold T/R |
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