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參數(shù)資料
| 型號(hào)： | 2SD1221O |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, 2-7J1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | 2SD1221O |
2SD1221
2010-05-19
1
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
Audio Frequency Power Amplifier Application
Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1221-O(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SD1221Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 |
| 2SD1221-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 60V 3A PW MOLD |
| 2SD1221-Y(T6L1,NQ) | 制造商:Toshiba 功能描述:NPN |
| 2SD1221-Y(TE16L1,N | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) New PW-Mold T/R |
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