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參數(shù)資料
| 型號： | 2SD1140 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 2SD1140 |
2SD1140
2009-12-21
3
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(
m
A
)
hFE – IC
DC
curre
nt
gain
h
FE
Collector current IC (A)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(
m
A
)
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(
m
A
)
0
100
600
4
6
IB = 10 μA
20
Common emitter
Ta = 25°C
300
200
400
500
1
2
3
5
30
40
50
60
0
100
600
4
6
Common emitter
Ta = 100°C
300
200
400
500
1
2
3
5
IB = 5 μA
10
15
20
25
35
0
30
0
100
600
4
6
Common emitter
Ta = 50°C
300
200
400
500
1
2
3
5
IB = 20 μA
40
60
80
100
0
120
140
160
100000
0.003
Common emitter
VCE = 2 V
300
500
3000
5000
10000
30000
50000
0.01
0.03
0.1
0.3
1
Ta = 100°C
25
50
1000
0.1
0.003
10
Ta = 50°C
100
25
Common emitter
IC/IB = 1000
1
0.3
1
0.01
0.03
0.1
0.3
0.5
3
5
0
0.2
1.0
0.4
0.8
1.6
2.4
Common emitter
VCE = 2 V
Ta = 100°C
25
50
1.2
2.0
0.4
0.6
0.8
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| 2SD1159 | 4.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1160 | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1160 | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1140(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SD1140_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor) |
| 2SD1140_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Micro Motor Drive, Hammer Drive Applications |
| 2SD1141 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor |
| 2SD1141K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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