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參數(shù)資料
| 型號： | 2SD1149R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 234K |
| 代理商： | 2SD1149R |
Transistors
1
Publication date: January 2003
SJC00208BED
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
High emitter-base voltage (Collector open) V
EBO
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
100
V
Collector-emitter voltage (Base open)
VCEO
100
V
Emitter-base voltage (Collector open)
VEBO
15
V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
100
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
100
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 015
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 60 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 0
1.0
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 2 mA
400
1 200
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.05
0.20
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
100
MHz
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Rank
R
S
hFE
400 to 800
600 to 1 200
Marking symbol 1V
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1149S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20MA I(C) | TO-236AB |
| 2SD1151 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:NPN EPITAXIAL PLANAR |
| 2SD1152 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9255V .1A .2W ECB |
| 2SD1153 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Drivers Applications |
| 2SD1153-AE | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 80V 50A TO-226 |
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