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參數(shù)資料
| 型號(hào)： | 2SC6080 |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220ML, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | 2SC6080 |
2SC6080
No. A0277-1/4
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
60
V
Collector-to-Emitter Voltage
VCES
60
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
13
A
Collector Current (Pulse)
ICP
PW
≤10s, duty cycle≤10%
15
A
Base Current
IB
2A
Collector Dissipation
PC
2W
Tc=25
°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
10
A
DC Current Gain
hFE1VCE=2V, IC=270mA
200
560
hFE2VCE=2V, IC=8.1A
50
Continued on next page.
Ordering number : ENA0277
72606 / 31506FA MS IM TB-00002091
2SC6080
NPN Epitaxial Planar Silicon Transistor
50V / 13A High-Speed Switching
Applications
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6081 | 功能描述:TRANS NPN 50V 5A TO-220ML RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SC6082 | 功能描述:兩極晶體管 - BJT BIP NPN 15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6082-1E | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / BIP NPN 15A 50V |
| 2SC6082-1EX | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V |
| 2SC6082-EPN-1E | 制造商:ON Semiconductor 功能描述:BIP NPN 15A 50V - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD - BIP NPN 15A 50V |
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