參數(shù)資料
型號: 2SC5851FATL-E
元件分類: 小信號晶體管
英文描述: 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-70, CMPAK-3
文件頁數(shù): 3/5頁
文件大?。?/td> 176K
代理商: 2SC5851FATL-E
2SC5851
Rev.1.00 Aug 10, 2005 page 3 of 6
Main Characteristics
100
DC Current Transfer Ratio vs.
Collector Current
0.1
VCE = 6 V
Maximum Collector Dissipation Curve
Ambient Temperature
Ta (°C)
50
100
150
100
50
0
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
Collector
Power
Dissipation
P
C
*
(mW)
Typical Output Characteristics
Collector to Emitter Voltage
VCE (V)
Collector
Current
I
C
(mA)
10
8
6
4
2
020
16
12
8
4
Pulse test
IB = 0
20
A
40
60
80
100
VCE = 6 V
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
0.2
0.4
0.6
0.8
1.0
10
8
6
4
2
0
Collector Current
IC (mA)
DC
Current
Transfer
Ratio
h
FE
80
40
20
0
60
0.3
1.0
3
10
30
Noise Figure vs. Collector Current
Collector Current
IC (mA)
Noise
Figure
NF
(dB)
5
0.2
VCE = 6 V
Rg = 500
f = 1.0 MHz
4
3
2
1
0
0.5
1.0
2
5
10
Noise Figure vs. Collector Current
Collector Current
IC (mA)
Noise
Figure
NF
(dB)
24
0.1
VCE = 6 V
Rg = 50
f = 100 MHz
20
16
12
8
4
0
0.2
0.5
1.0
2
5
10
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