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參數(shù)資料
| 型號： | 2SC5857 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 21 A, 750 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-16E3A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 197K |
| 代理商： | 2SC5857 |
2SC5857
2004-5-18
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5857
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
High Voltage
: VCBO = 1700 V
Low Saturation Voltage
: VCE (sat) = 1.5 V (max)
High Speed
: tf(2) = 0.1 s (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1700
V
CollectorEmitter Voltage
VCEO
750
V
EmitterBase Voltage
VEBO
5
V
DC
IC
21
Collector Current
Pulse
ICP
42
A
Base Current
IB
10.5
A
Collector Power Dissipation
PC
75
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Min
Typ.
Max
UNIT
Collector Cutoff Current
ICBO
VCB = 1700 V, IE = 0
―
1
mA
Emitter Cutoff Current
IEBO
VEB = 5 V, IC = 0
―
100
A
Collector Emitter Breakdown Voltage
V (BR) CEO IC = 10 mA, IB = 0
750
―
V
hFE (1)
VCE = 5 V, IC = 2 A
30
―
60
hFE (2)
VCE = 5 V, IC = 8 A
11
―
19
DC Current Gain
hFE (3)
VCE = 5 V, IC = 17 A
5
―
7.5
―
CollectorEmitter Saturation Voltage
VCE (sat)
IC = 17 A, IB = 4.25 A
―
1.5
V
BaseEmitter Saturation Voltage
VBE (sat)
IC = 17 A, IB = 4.25 A
―
1.0
1.5
V
Transition Frequency
fT
VCE = 10 V, IC = 0.1 A
―
2
―
MHz
Collector Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
280
―
pF
Storage Time
tstg(1)
―
4.5
―
Fall Time
tf(1)
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
―
0.1
―
s
Storage Time
tstg(2)
―
3.5
―
Switching Time
Fall Time
tf(2)
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
―
0.1
―
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5858 | 制造商:Distributed By MCM 功能描述:1700V 22A 200W Bce Toshiba Transistor 2-21F2A |
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| 2SC58630QL | 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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