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參數(shù)資料
| 型號(hào)： | 2SC5765 |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92SP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | 2SC5765 |
UTC2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R216-002,B
MEDIUM POWER AMPLIFIER
STROBO FLASH
DESCRIPTION
* medium power amplifier applications
*
strobo flash applications
FEATURES
*Low Saturation Voltage: VCE(sat) = 0.27 V (max.),
(Ic = 3A / IB =60 mA)
TO-92SP
1
1.EMITTER 2.COLLECTOR 3.BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
7
V
5(DC)
A
Collector Current
Ic
9(PLUSED)
A
Collector Power Dissipation
Pc(Note 1)
550
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 ~ +150
°C
Note 1: When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC =1mA, IB= 0
10
V
Collector Cut-Off Current
ICBO
VCB=15V, IE= 0
0.1
μ
A
Emitter Cut-Off Current
IEBO
VEB= 5V, Ic=0
0.1
μ
A
hFE 1 (Note 2)
VCE=1.5V,Ic=0.5A
450
700
hFE2 (Note 2)
VCE=1.5V,Ic=2A
320
DC Current Gain
hFE3 (Note 2)
VCE=1.5V,Ic=5A
170
Collector-Emitter Saturation Voltage
VCE(sat) (note 2) Ic=3A,IB=60mA
0.27
V
Collector Output Capacitance
Cob
VCB=10V, IE= 0, f=1MHz
25
pF
Note 2: Pulse test
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