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參數(shù)資料
| 型號： | 2SC5759 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial UHF / VHF wide band amplifier |
| 中文描述： | npn型硅外延超高頻/甚高頻寬帶放大器 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 92K |
| 代理商： | 2SC5759 |
2SC5759
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
Pc
15
V
Collector to emitter voltage
6
V
Emitter to base voltage
1.5
V
Collector current
80
mA
Collector power dissipation
200*
mW
Junction temperature
Tj
150
°
C
°
C
Storage temperature
* When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
—
—
1
μ
A
V
CB
= 12 V, I
E
= 0
V
CE
= 6 V, R
BE
=
∞
V
EB
= 1.5 V, I
C
= 0
V
CE
= 5 V, I
C
= 50 mA
V
= 5 V, I
E
= 0
f = 1 MHz
Collector cutoff current
—
—
1
mA
Emitter cutoff current
—
—
10
μ
A
DC current transfer ratio
80
120
160
V
Collector output capacitance
—
1.2
2.2
pF
Gain bandwidth product
f
T
8
10.6
—
GHz
V
= 5 V, I
C
= 50 mA
f = 1 GHz
Power gain
PG
7
11.5
—
dB
V
= 5 V, I
= 50 mA
f = 900 MHz
Noise figure
NF
—
1.1
1.9
dB
V
= 5 V, I
= 5 mA
f = 900 MHz
S
21
parameter
|S
21
|
2
—
10.3
—
dB
V
= 5 V, I
C
= 50 mA
f = 1 GHz
Output IP3
OIP3
—
36
—
dBm
V
= 5 V, I
= 50 mA
f = 800 MHz
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