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參數(shù)資料
| 型號： | 2SC5763 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC5763 |
2SC5763
No.6989-1/4
Switching Regulator Applications
Features
High breakdown voltage.
High reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
700
400
8
7
PW
≤
300
μ
s, Duty cycle
≤
10%
14
Collector Dissipation
PC
1.75
55
150
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
10
10
μ
A
μ
A
Continued on next page.
* : The hFE1 of the 2SC5763 is classified as follows.
Rank
M
hFE1
20 to 40
N
30 to 50
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6989A
2SC5763
Package Dimensions
unit : mm
2010C
[2SC5763]
D0301 TS IM TA-3501 / 71801 TS IM TA-3234
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
10.2
5.1
3.6
1
5
2
6
1
1.2
1
0.8
1.3
4.5
0.4
2.55
2.55
2
1 2 3
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