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參數(shù)資料
| 型號： | 2SC5757 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
| 中文描述： | npn型硅外延甚高頻/超高頻寬帶放大器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2SC5757 |
2SC5757
Rev.4, Jul. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
Pc
10
V
Collector to emitter voltage
3.5
V
Emitter to base voltage
1.5
V
Collector current
80
mA
Collector power dissipation
80
mW
°
C
°C
Junction temperature
Tj
150
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
10
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
C
ob
f
T
PG
80
100
600
nA
V
CB
= 10 V, I
E
= 0
V
CE
= 3.5 V, R
BE
= Infinite
V
EB
= 1.5 V, I
C
= 0
V
CE
= 1 V, I
C
= 5 mA
V
CB
= 1 V, I
E
= 0, f = 1 MHz
V
CE
= 1 V, I
C
= 5 mA
V
= 1 V, I
C
= 5 mA,
f = 900 MHz
Collector cutoff current
200
nA
Emitter cutoff current
100
nA
pF
DC current transfer ratio
130
Collector output capacitance
0.9
1.2
1.5
Gain bandwidth product
4.5
6.5
GHz
Power gain
8
11
dB
Noise figure
NF
1.1
2.0
dB
V
= 1 V, I
C
= 5 mA,
f = 900 MHz
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