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參數(shù)資料
| 型號(hào)： | 2SC5755 |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 中文描述： | 高速開關(guān)應(yīng)用DC - DC轉(zhuǎn)換器應(yīng)用頻閃應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 2SC5755 |
2SC5755
2002-07-22
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.2 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.12 V (max)
High-speed switching: t
f
= 25 ns (typ.)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
10
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
2
Collector current
Pulse
I
CP
3.5
A
Base current
I
B
200
mA
DC
500
Collector power
dissipation
t 10 s
P
C
(Note)
750
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
20 V, I
E
0
100
nA
Emitter cut-off current
I
EBO
V
EB
7 V, I
C
0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
10 mA, I
B
0
10
V
h
FE
(1)
V
CE
2 V, I
C
0.2 A
400
1000
DC current gain
h
FE
(2)
V
CE
2 V, I
C
0.6 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
0.6 A, I
B
12 mA
0.12
V
Base-emitter saturation voltage
V
BE (sat)
I
C
0.6 A, I
B
12 mA
1.10
V
Rise time
t
r
60
Storage time
t
stg
215
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
≈
6 V, R
L
10
I
B1
I
B2
12 mA
25
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
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