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參數(shù)資料
| 型號(hào)： | 2SC5765 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
| 中文描述： | 介質(zhì)功率放大器應(yīng)用STOROBO Flash應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SC5765 |
2SC5765
2002-01-16
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5765
MEDIUM POWER AMPLIFIER APPLICATIONS
STOROBO FLASH APPLICATIONS
Low Saturation Voltage: V
CE (sat) (1)
= 0.27 V (max.)
(I
C
= 3 A/I
B
= 60 mA)
Maximum Ratings
(Ta 25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base voltage
V
CBO
15
V
Collector-Emitter voltage
V
CEO
10
V
Emitter-Base voltage
V
EBO
7
V
DC
I
C
5
Collector current
Pulsed
I
CP
9
A
Collector power dissipation
P
C
(Note1)
550
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 to 150
C
Note 1: When a device is mounted on a glass epoxy board
(35 mm 30 mm 1mm)
Electrical Characteristics
(Ta 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector cut-off current
I
CBO
V
CB
15 V, I
E
0
0.1
A
Emitter cut-off current
I
EBO
V
EB
5 V, I
C
0
0.1
A
Collector-Emitter breakdown voltage
V
(BR)CEO
I
C
1 mA, I
B
0
10
V
h
FE(1)
(Note2) V
CE
1.5 V, I
C
0.5 A
450
700
h
FE(2)
(Note2) V
CE
1.5 V, I
C
2 A
320
DC current gain
h
FE(3)
(Note2) V
CE
1.5 V, I
C
5 A
170
Collector-Emitter saturation voltage
V
CE (sat)
(Note2)
I
C
3 A, I
B
60 mA
0.27
V
Collector-Output Capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
25
pF
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g
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