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參數(shù)資料
| 型號： | 2SC5337QR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 47K |
| 代理商： | 2SC5337QR |
Data Sheet P10939EJ2V1DS
2
2SC5337
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
–
0.01
5.0
A
Emitter Cut-off Current
IEBO
VBE = 2 V, IC = 0 mA
–
0.03
5.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 50 mA
40
120
200
–
RF Characteristics
Insertion Power Gain
S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz
7.0
8.3
–
dB
Noise Figure (1)
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 500 MHz
–
1.5
3.5
dB
Noise Figure (2)
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 1 GHz
–
2.0
3.5
dB
2nd Order Intermoduration
Distortion
IM2
VCE = 10 V, IC = 50 mA, RS = RL = 75
,
Vin = 105 dB
V/75 , f1 = 190 MHz,
f2 = 90 MHz, f = f1
f2
–
59.0
–
dB
3rd Order Intermoduration Distortion
IM3
VCE = 10 V, IC = 50 mA, RS = RL = 75
,
Vin = 105 dB
V/75 , f1 = 190 MHz,
f2 = 200 MHz, f = 2
× f1 f2
–
82.0
–
dB
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. RS = RL = 50
, tuned
hFE CLASSIFICATION
Rank
QQ
QR
QS
Marking
QQ
QR
QS
hFE Value
40 to 80
60 to 120
100 to 200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5337QR-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QS-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337-T1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN Silicon RF Transistor for High-Frequency |
| 2SC5337-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 15V 0.25A 4-Pin(3+Tab) Power Mini-Mold T/R Cut Tape |
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