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參數(shù)資料
| 型號(hào)： | 2SC5338-T1SF |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC5338-T1SF |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10940EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
1996, 2001
NPN SILICON RF TRANSISTOR
2SC5338
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
The mark
shows major revised points.
FEATURES
High gain:
S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz
Low distortion, low voltage: IM2 =
55 dB TYP., IM3 = 76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dB
V/75
4-pin power minimold package with improved gain from the 2SC4703
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5338
25 pcs (Non reel)
Magazine case
2SC5338-T1
1 kpcs/reel
12 mm wide embossed taping
Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
2.5
V
Collector Current
IC
150
mA
Total Power Dissipation
Ptot
Note
1.8
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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| 2SC5338SE | Si, RF SMALL SIGNAL TRANSISTOR |
| 2SC5343-G-AP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC5343-O-BP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC5353-T60-K | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SC5353L-T6C-K | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5339 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC5339LBMA1 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR PANASONIC |
| 2SC5342 | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor (Medium power amplifier) |
| 2SC5342M | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor (Medium power amplifier) |
| 2SC5342N | 制造商:AUK 制造商全稱:AUK corp 功能描述:Epitaxial planar NPN silicon transistor |
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