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參數(shù)資料
| 型號(hào)： | 2SC5336-T1RE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-4 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC5336-T1RE |
Data Sheet P10938EJ2V0DS
2
2SC5336
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
1.0
A
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
–
1.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
50
120
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
–
6.5
–
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
–
12
–
dB
Noise Figure (1)
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
–
1.1
–
dB
Noise Figure (2)
NF
VCE = 10 V, IC = 40 mA, f = 1 GHz
–
1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1 MHz
–
0.5
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
RH
RF
RE
Marking
RH
RF
RE
hFE Value
50 to 100
80 to 160
125 to 250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5337QS | Si, RF SMALL SIGNAL TRANSISTOR |
| 2SC5337-QS | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5337QR | Si, RF SMALL SIGNAL TRANSISTOR |
| 2SC5337-T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5338-T1SF | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5337 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC5337(NE461M02) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5337-AZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN Silicon RF Transistor for High-Frequency |
| 2SC5337QQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QQ-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
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