
O3101TS KT/61598TS (KOTO) TA-1238 No.5883-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Inverter Lighting Applications
Ordering number:ENN5883A
2SC5304LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
1V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
5
4V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
9V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
7A
)
e
s
l
u
p
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
4
1A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
2W
5
3W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2079D
[2SC5304]
Features
High breakdown voltage (VCBO=1000V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
C
Tc=25C
C
Electrical Characteristics at Ta=25C
SANYO:TO-220FI (LS)
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
5
4
=
E 0
=0
1A
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
S
E
C
V E
C
R
,
V
0
1
=
E
B
0
=0
.
1A
m
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
o
t
c
e
ll
o
CV
)
s
u
s
(
O
E
C
IC
I
,
A
m
0
1
=
B 0
=0
5
4V
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
9
=
C 0
=0
.
1A
m
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
)
t
a
s
(
E
C
IC
I
,
A
5
.
3
=
B
A
7
.
0
=0
.
1V
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV
)
t
a
s
(
E
B
IC
I
,
A
5
.
3
=
B
A
7
.
0
=5
.
1V
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
5
=
C
A
3
.
0
=0
30
40
5
h E
F 2V E
C
I
,
V
5
=
C
A
0
.
3
=0
1
e
m
i
T
e
g
a
r
o
t
St g
t
s
IC
I
,
A
5
.
3
=
1
B
I
,
A
7
.
0
=
2
B
A
4
.
1
–
=5
.
2s
e
m
i
T
ll
a
Ftf
IC
I
,
A
5
.
3
=
1
B
I
,
A
7
.
0
=
2
B
A
4
.
1
–
=5
1
.
0s
1:Base
2:Collector
3:Emitter
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
12 3
10.0
3.2