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參數(shù)資料
| 型號： | 2SC5317FT |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | TESM, 2-1B1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SC5317FT |
2SC5317FT
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5317FT
VHF-UHF Band Low Noise Amplifier Applications
(chip: fT = 16 GHz series)
Low Noise Figure :NF = 1.3dB (f = 2GHz)
High Gain:|S21e|2 = 9dB (f = 2GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
8
V
Collector-Emitter voltage
VCEO
5
V
Emitter-Base voltage
VEBO
1.5
V
Collector-Current
IC
20
mA
Base-Current
IB
10
mA
Collector Power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature Range
Tstg
55~125
°C
Note:Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE = 3 V, IC = 15 mA
9
―
GHz
|S21e|
2 (1)
VCE = 3 V, IC = 15 mA, f = 1 GHz
12
15
―
Insertion Gain
|S21e|
2 (2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
6
9
―
dB
NF (1)
VCE = 3 V, IC = 5 mA, f = 1 GHz
―
0.9
1.8
Noise Figure
NF (2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
―
1.3
2.2
dB
Electrical Characteristics (Ta = 25°C)
haracteristics
Symbol
CTest Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB = 8 V, IE = 0
―
1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
―
―-
1
A
DC Current Gain
hFE
VCE = 3 V, IC = 15 mA
50
―
250
Output Capacitance
Cob
―
0.6
―
pF
Reverse Transistor Capacitance
Cre
VCB = 2.5 V, IE = 0, f = 1 MHz (Note )
―
0.4
0.85
pF
Note : Cre is measured by 3 terminal method with capacitance Bridge.
Unit: mm
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5317FT_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications |
| 2SC5318 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF VAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5319 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5319(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 5V 0.02A 4-Pin USQ T/R |
| 2SC5319(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
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