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參數(shù)資料
| 型號(hào)： | 2SC4995 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | 2SC4995 |
2SC4995
8
S Parameter
(V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.739
–65.4
11.99
140.8
0.0681
56.9
0.793
–44.9
400
0.643
–106.5
8.54
118.9
0.0957
41.5
0.576
–72.1
600
0.603
–132.0
6.34
106.4
0.107
34.9
0.446
–89.4
800
0.586
–148.7
4.99
97.9
0.114
32.6
0.369
–101.9
1000
0.578
–162.1
4.08
90.9
0.118
32.6
0.323
–112.0
1200
0.580
–171.9
3.45
86.0
0.124
32.7
0.396
–120.1
1400
0.588
179.9
2.99
81.7
0.129
33.3
0.275
–127.0
1600
0.596
172.9
2.67
77.2
0.134
34.3
0.263
–133.0
1800
0.607
166.8
2.41
73.4
0.139
35.9
0.256
–139.5
2000
0.617
161.0
2.20
70.0
0.145
36.9
0.254
–144.7
S Parameter
(V
CE
= 1 V, I
C
= 20 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.588
–127.7
19.25
119.0
0.0389
47.2
0.527
–86.7
400
0.618
–157.6
11.00
102.5
0.0483
45.3
0.380
–120.8
600
0.627
–171.4
7.62
94.6
0.0570
49.0
0.334
–139.3
800
0.639
179.6
5.80
89.2
0.0662
52.6
0.315
–150.9
1000
0.650
172.1
4.66
84.5
0.0768
55.9
0.306
–158.9
1200
0.656
–166.4
3.94
81.1
0.873
57.7
0.302
–165.4
1400
0.664
160.7
3.40
78.2
0.0996
59.2
0.301
–170.5
1600
0.677
156.5
3.03
75.2
0.110
60.2
0.301
–174.6
1800
0.689
151.6
2.71
71.9
0.122
61.1
0.304
–178.4
2000
0.696
147.5
2.47
69.2
0.134
61.2
0.306
178.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4995YD(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5000 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5000(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5000_04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5001 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Vce(sat) Transistor (Strobe flash) (-20V, -10A) |
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