參數(shù)資料
型號(hào)： 2SC5003
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
中文描述： 7 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： FM100, TO-3PF, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 25K
代理商： 2SC5003
123
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application :
Display Horizontal Deflection Output, Switching Regulator and General Purpose
External Dimensions
FM100(TO3PF)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5003
1500
800
6
7(
Pulse
14)
3.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
CEO
V
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
FEC
f
T
C
OB
2SC5003
100
max
1
max
1
max
6
min
8
min
4to9
5
max
1.5
max
2.0
max
4
typ
100
typ
Unit
μ
A
mA
mA
V
V
V
V
MHz
pF
Conditions
V
CB
=1200V
V
CB
=1500V
V
CE
=800V
I
EB
=300mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=5A
I
C
=5A, I
B
=1.2A
I
C
=5A, I
B
=1.2A
I
EC
=7A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
2S C5003
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
50
4
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1.6
t
stg
(
μ
s)
4.0
max
t
f
(
μ
s)
0.2
max
I
(A)
0.8
V
(V)
10
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
Built-in Damper Diode
h
FE
–I
C
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
C
Characteristics
(Typical)
Pc–Ta Derating
0
3
2
1
0.2
0.5
1
10
5
Collector Current I
C
(A)
80
60
40
20
3.5
00
50
25
75
125
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Safe Operating Area
(Single Pulse)
500
100
1000
1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
C
C
(
(I
C
: I
B
=5 :1)
t
stg
t
f
–I
C
Characteristics
(Typical)
100
μ
s
0
7
6
4
2
0
1.5
0.5
1.0
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=5V)
1Cee)
2(em
–Csm
0.02
0.1
0.05
0.5
1
5
7
2
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=5V)
125C
25C
–30C
0.2
1
5
0.5
7
0.1
0.5
5
20
10
1
S
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
f
V
CC
=200V
I
C
: I
B1
: –I
B2
=5 :1: 2
Time t(ms)
0.1
1
3
0.5
1
10
100
1000
2000
T
θ
j
(
θ
j-a
–t
Characteristics
Reverse Bias Safe Operating Area
100
500
50
2000
1000
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
I
C
–V
CE
Characteristics
(Typical)
0
0
2
1
7
3
4
5
6
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
1.7A
1.4A
600mA
900mA
300mA
I
B
=100mA
..
B
C
E
(50
)
Equivalent
circuit
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