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參數(shù)資料
| 型號： | 2SC4097R |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 500MA I(C) | SC-70 |
| 中文描述： | 晶體管|晶體管|叩| 32V的五（巴西）總裁| 500mA的一（c）|的SC - 70 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 2SC4097R |
2SC2411K / 2SC4097 / 2SC1741S
Transistors
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
82
250
6.0
1
1
390
0.4
V
I
C
=
100
μ
A
I
C
=
1mA
I
E
=
100
μ
A
V
CB
=
20V
V
EB
=
4V
V
CE
=
3V, I
C
=
100mA
I
C
/I
B
=
5
00mA/50mA
V
CE
=
5V, I
E
=
20mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
120
560
V
MHz
pF
Typ.
Max.
Unit
Conditions
2SC2411K, 2SC4097
2SC1741S
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
!
Packaging Specifications and h
FE
T146
T106
3000
3000
TP
5000
PQR
h
FE
PQR
2SC2411K
2SC4097
QRS
2SC1741S
Type
Package
Code
Taping
Basic ordering unit (pieces)
h
FE
values are classified as follows:
Item
P
Q
R
h
FE
82
～
180
120
～
270
180
～
390
S
270
～
560
!
Electrical characteristic curves
0.8
0.2
0.4
0.9
0.7
0.5
1.1
0.3
1.0
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta
=
100
°
C
25
°
C
80
°
C
25
°
C
55
°
C
V
CE
=
6V
C
C
(
m
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Fig.1 Grounded emitter propagation
characteristics
1
0
2
3
4
5
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
=
0A
Ta
=
25
°
C
C
C
(
m
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.2 Grounded emitter output
characteristics(
Ι
)
1
0
2
3
4
5
0
500
400
300
200
100
2mA
1.8mA
1.4mA
1.0mA
0.2mA
0.4mA
0.6mA
0.8mA
I
B
=
0A
Ta
=
25
°
C
C
C
(
m
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.3 Grounded emitter output
characteristics(
ΙΙ
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4097-R | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC4097T106 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4097T106Q | 功能描述:兩極晶體管 - BJT NPN 32V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4097T106R | 功能描述:兩極晶體管 - BJT NPN 32V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4097W | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
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