參數(shù)資料
型號(hào): 2SC4097R
廠商: Rohm CO.,LTD.
英文描述: TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 500MA I(C) | SC-70
中文描述: 晶體管|晶體管|叩| 32V的五(巴西)總裁| 500mA的一(c)|的SC - 70
文件頁數(shù): 1/3頁
文件大?。?/td> 74K
代理商: 2SC4097R
2SC2411K / 2SC4097 / 2SC1741S
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K / 2SC4097 / 2SC1741S
!
Features
1) High I
CMax
.
I
CMax
.
=
0.5mA
2) Low V
CE(sat)
.
Optimal for low voltage operation.
3) Complements the
2SA1036K / 2SA1577 / 2SA854S.
!
Structure
Epitaxial planar type
NPN silicon transistor
!
External dimensions
(Units : mm)
2SC2411K
2SC4097
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
0
0.1
2
±
0
1
0
0
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0
0.1
+
0.2
+
0.1
+
0.1
(2)
(1)
(3)
0
0.1
(2)
(1)
(3)
0
0
2
±
0
1
±
0
0.9
±
0.1
0.2
0.7
±
0.1
0.15
±
0.05
0.3
2.0
±
0.2
1.3
±
0.1
0.65 0.65
0
3
±
0
(
2
±
0.2
0.45
0.5
0.45
5
(1) (2) (3)
+
0.05
+
0.05
2.5
+
0.4
0.1
3
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SC1741S
Abbreviated symbol : C*
Abbreviated symbol : C*
All terminals have same dimensions
All terminals have same dimensions
*
Denotes h
FE
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
40
V
V
V
A
W
°
C
°
C
32
5
0.5
*
I
C
0.2
150
55
~ +
150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
C
must not be exceeded.
*
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4097-R 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors
2SC4097T106 制造商:ROHM Semiconductor 功能描述:
2SC4097T106Q 功能描述:兩極晶體管 - BJT NPN 32V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4097T106R 功能描述:兩極晶體管 - BJT NPN 32V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4097W 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor