參數(shù)資料
型號: 2SC3957
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial, Darlington
中文描述: npn型硅外延,達林頓
文件頁數(shù): 2/6頁
文件大小: 33K
代理商: 2SC3957
2SC3957
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
Tj
40
V
Collector to emitter voltage
30
V
Emitter to base voltage
10
V
Collector current
300
mA
Collector peak current
500
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
30
V
I
C
= 1 mA, R
BE
=
Collector cutoff current
I
CBO
I
EBO
h
FE1
*
1
h
FE2
*
1
h
FE3
*
1
V
CE(sat)
100
nA
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
I
C
= 10 mA, V
CE
= 5 V*
2
I
C
= 100 mA, V
CE
= 5 V*
2
I
C
= 400 mA, V
CE
= 5 V*
2
I
C
= 100 mA, I
B
= 0.1 mA*
2
Emitter cutoff current
100
nA
DC current transfer ratio
2000
100000
3000
3000
Collector to emitter saturation
voltage
1.5
V
Base to emitter saturation
voltage
Notes: 1. The 2SC3957 is grouped by h
FE
as follows.
2. Pulse test
Mark
GIA
V
BE(sat)
2.0
V
I
C
= 100 mA, I
B
= 0.1 mA*
2
GIB
h
FE1
h
FE2
h
FE3
2000 to 100000 5000 to 100000
3000 min
10000 min
3000 min
10000 min
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